Thick metal interconnect with metal pad caps at selective sites and process for making the same

ABSTRACT

The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a thick aluminum wire-bond that is required for high current carrying capability and is mechanically stable against vibration during use, and process thereof. The invention further discloses a thick metal interconnect with metal pad caps at selective sites, and process for making the same.

CROSS-REFERENCE TO RELATED APPLICATION

The instant patent application is related to U.S. Provisional PatentApplication Ser. No. 61/007,714, filed on Dec. 14, 2007, titled “ThickMetal Interconnect With Metal Pad Caps At Selective Sites And ProcessFor Making The Same,” the disclosure of which is incorporated herein byreference.

FIELD OF THE INVENTION

The present invention relates to a high power IC (Integrated Circuit)semiconductor device and process for making same. More particularly, theinvention encompasses a high conductivity or low resistance metal stackto reduce the device R-on which is stable at high temperatures while incontact with a thick aluminum wire-bond that is required for highcurrent carrying capability and is mechanically stable against vibrationduring use, and process thereof. The invention further discloses a thickmetal interconnect with metal pad caps at selective sites, and processfor making the same.

BACKGROUND INFORMATION

FIG. 1, shows a simplified schematic cross-section of a portion of anintegrated circuit (IC) chip with a diffused drain power transistor,illustrating a typical n-type Laterally Diffused drain Metal OxideSilicon (n-LDMOS) power transistor structure in silicon substrate 100,of the prior art, where on a p-substrate, an N-tub and a N-buried layeris formed by methods well known in the art. The structure 100, typicallyhas an inter-metal dielectric (IMD) layer or film 105, with drain 101,in an N-well, source 102, gate 103, and extended drain 110. These powertransistors use an extended drain 110, with low doping concentration toprevent the inversion layer, which is initiated at drain contact 101,when power is off, from extending into the gate region 103. It is wellknown that the low doping and extended drain region 110, is the mainsource of high Rds-on in power transistors.

The typical circuit layout for power transistors, as illustrated in FIG.1, is to linearly lay these power transistors in a linear array withparallel circuit connections as more clearly shown in FIG. 3A, ofvarious components of an IC contributing to R-on. Furthermore, FIG. 3Bshows equivalent circuits of power transistors laid out in area arrayform, while FIG. 3C is an enlarged view of the equivalent circuits asshown in FIG. 3B. This linear array layout of FIG. 3A, is generally usedby designers to keep the interconnect resistance at the minimum and tokeep the temperature low and uniform. Accordingly, a semiconductorintegrated circuit for high voltage application is characterized by alarge circuit area for its lateral organization of power transistors,and these individual transistors themselves are relatively large, beingcomprised of a low-doped extended drain area required for high blockingvoltages.

In addition to larger silicon area, which implies a higher product cost,the large device area also limits the electric current level that can beused, particularly because of the “hot-spot” generation.

In power devices, a parameter of importance is “R-on” which is broadlycomprised of two components, Rds-on and Rint. The Rds-on ischaracterized by the given semiconductor process technology node, devicestructure and operating conditions including device junctiontemperature. For a group of power transistors in a given technology nodeand device structure, configured in a given manner and operating at agiven gate voltage Vgs and device junction temperature Tj, the Rds-on ismostly fixed. The Rint on the other hand is characterized by the metalinterconnect resistance arising from metal traces and vias between thebond wire and source/drain contacts as shown in FIG. 3A. The Rint alsocomprises the bond wire resistance and the package resistance arisingfrom leads, traces and vias, depending upon the package type.

To optimize circuit performance, circuit designers usually considerlowering the “specific resistance,” Rsp, of the power transistor layout.The specific resistance, Rsp, is defined as a product of Rds-on and thepower device area:Rsp=Rds-on*Device Area.

Rds-on is more or less fixed as mentioned above, the interconnect metalresistance component of Rint, and thereby the value of Rint, can bereduced by utilizing a thick low resistivity metal interconnect,referred to hereinafter as “Power Metal.” This is because:R-on=Rds-on+Rint,which is the reduction of Rint by the use of power metal, which reducesR-on.

FIG. 2, shows reduction of R-on with increasing thickness of Power Metalor PowerM (i.e., decreasing interconnect resistance). However, for agiven application, the R-on is a fixed quantity, hence reduction of Rintby the use of power metal, allows one to increase the Rds-on; thatallows reduced device area for a given Rsp.

Thus the main application of thick low resistivity power metal on powerdevices has been to shrink the device area for cost benefit. On theother hand, one may choose to use the Power Metal and keep the devicearea same and allow a higher Rds-on. Because the Rds-on is a directfunction of device junction temperature, the use of Power Metal willthereby allow a higher junction temperature, Tj. Power transistorsnormally operate at about 150 C maximum junction temperature, however,with the use of Power Metal, transistors can thus operate up to 200 Cjunction temperature.

Applications requiring service at high temperature, such as, forexample, alternator controller, under the hood applications,transmission control or brakes in automobile, to name a few, require thedevice to function at junction temperatures in the range of 150 C to 200C. Such applications also require a high current, 4 A to 10 A with peakcurrent going up to 30 A. A thick aluminum wire (wire diameter fromabout 8 mil to about 20 mil) is generally used for wire bonding on chipfor its high current carrying capability (about 8 A to about 40 A), withmechanical strength to sustain high amplitude vibration and low cost.For such applications the three preferred choices for power metal areCopper, Aluminum and Gold. Silver is another choice but it suffers fromstrong atmospheric corrosion susceptibility. It should be noted that therequired thickness of power metal is in the range of about 8 um to about35 um to play a beneficial role in power transistors. Presently, a metalfilm of such thickness can only be deposited by electroplatingtechnique. Because aluminum cannot be electroplated, the choice of powermetal is limited to either Copper or Gold. Both of these metals aremetallurgically incompatible with Aluminum that is used for wire bond asmentioned above. Basically, Aluminum forms intermetallic compounds witheither Copper or Gold giving reliability problems in temperature storagetest, especially above 150 C. For this reason the copper metalinterconnects are usually coated with Nickel followed by a thin layer ofGold or Palladium/Gold.

Another significant problem in power devices is “hot spots.” Because ofthe additional resistance coming from the extended drain 110, powertransistors dissipate more energy, so the driver region of the IC chipbecomes the hottest region, called “hot spots.” Temperature in hotspots, depending upon the number of power transistors in a given array,the array layout, operating frequency and duty cycle, and leakagecurrent, can rise up to 350 C. These localized hot spots that aresignificantly above the average die or chip temperature, limit the IC'sperformance and reliability. However, power metal provides an addedadvantage of reducing the intensity of a hot spot by spreading the heat.Accordingly, a power metal with high thermal conductivity is desiredwhich is also thermally stable with Aluminum interconnect and bond wireat these hot spot temperatures.

The use of thick, low resistivity Power Metal interconnects in powerdevices has been explored in the prior art. For example, U.S. Pat. No.7,132,726 (Rueb et al.), the disclosure of which is incorporated hereinby reference, discloses a method to provide a thick aluminum patternover power devices and a thin aluminum interconnect for a fine linepattern in logic circuit. First a 3 um thick aluminum interconnect isdefined by wet etch process in power transistor area of the device die,followed by 0.8 um thick aluminum fine line pattern defined by ReactiveIon Etch (RIE) process. Rueb et al. disclose that at least about 10 umthick copper is required for R-on reduction to be beneficial. Thistranslates to about 16 um thick Ti/Al-0.5% Cu interconnect metalthickness. To define interconnect metal pattern with metal thicknessabove about 3 um, the techniques such as wet etch, Reactive Ion Etch,Damascene or Metal Lift-off are not applicable in the requiredresolution range of less than 10 um. For metal thickness above 3 um, theusual metal interconnect formation technique involves electroplatinginto a negative pattern of interconnects defined by either positive ornegative photoresist. There is no known electroplating technique foraluminum, hence, Rueb et al.'s teaching does not provide solutions toovercome the prior art problems.

U.S. Pat. No. 6,372,586 (Efland et al.), the disclosure of which isincorporated herein by reference, discloses a method to overlay a thickcopper layer making contact to at least a part of the last aluminummetal layer of an IC device through the passivation layer. Efland usesthe industry standard “electroplating through negative mask pattern”technique to deposit up to 20 um thick copper with TiW barrier.

U.S. Pat. No. 7,045,903 (Efland et al.), the disclosure of which isincorporated herein by reference, discloses an improved TiW/Cu structurewhich is obtained by electroplating Nickel and gold layers on top ofcopper. This structure provides superior gold wire-bond reliability.However, this structure has several shortcomings for high temperaturehigh current applications, which require a large diameter aluminum wirebonding, such as, for example, at about 175 C the pure electroplatednickel diffuses almost through the copper layer underneath in about 100hours, thereby substantially increasing the resistivity of the thickcopper interconnect. Furthermore, the TiW/Cu or TiW/Cu/Ni/Au is notcompatible with thick aluminum wire-bonding as aluminum and copper orgold (if gold is more than 1000 A thick) react to form CuAl2 or AuAl2inter-metallic compound which is well known in the industry for poorreliability, especially above 150 C, due to Kirkendall void formationleading to Open-Circuit. Electroplating less than 3000 A thick gold is anon-manufacturable process because of high plating rate in the industrystandard cyanide bath used for gold plating. One of the most seriousshortcoming of these Power Metal structures is the unprotected coppersidewall, especially, with the presence of humidity, temperature andelectrical bias, copper atoms migrate from the unprotected coppersidewalls causing electrical shorting between adjacent interconnectlines. With industry standard Highly Accelerated Stress Test (HAST) at135 C/85% RH/5V bias, about 40% failure is observed in 96 hours for suchstructures.

U.S. Pat. No. 7,235,844 (Itou), the disclosure of which is incorporatedherein by reference, discloses that covering the electroplated Cu/Ni/Auinterconnect lines with a thick layer of polyimide does not prevent thecopper migration from the sidewalls. Itou teaches to first form theTiW/Cu interconnect traces and then coat it with a barrier and aluminumlayers on top and sides, followed by photolithography to remove thebarrier and the aluminum between the traces. The atmospheric corrosionof aluminum is well known; as is standard practice in IC processing,Itou protects the aluminum coated copper traces from environmentaleffect by a polyimide passivation. Another photolithography process stepis applied to open the bond pad areas. Wire is then bonded on aluminumcoated copper pads through the openings in the polyimide. Whereas Itou'smethod could provide sidewall protection to copper traces, it requiresadditional expensive photolithography process steps. Furthermore, thewedge wire bonding required for large diameter aluminum wire bonding isnot possible because the travel of the wire bond head will impact thepolyimide sidewall unless very wide openings in the polyimide areprovided, thus constraining the number of Input/Output contacts allowed.

U.S. Pat. No. 6,472,304 (Chittipeddi et al.), the disclosure of which isincorporated herein by reference, discloses the protection of a coppersidewall by Tantalum. However this method requires the Damascene methodto form the copper traces. Apart from being an expensive process, theDamascene method is not applicable to thick metal interconnect, as thereis no practical way to etch deep trenches in the oxide layer before thepattern defining resist is eroded away. Wire-bonding through openings inpolyimide is also required in the structure taught by Chittipeddi et al.thus limiting its application as discussed earlier.

U.S. Pat. No. 6,066,877 (Williams et al.), the disclosure of which isincorporated herein by reference, discloses the plating of a nickellayer on top of aluminum IC interconnects by an electroless platingmethod. With the high tensile intrinsic thin film stresses inelectrolessly plated nickel films, 1×10⁻¹⁰ to 5×10⁻¹⁰ dynes/cm², theforce in the film, stress×thickness, acting normal to the substratebuilds up with the film thickness, causing metal film peeling. It iswell established that about 5 um is the maximum nickel thickness, asabove which nickel film peeling is frequently observed. For reliablysafe processing, the electroless nickel film thickness is usuallylimited to 3 um.

Accordingly, bearing in mind the problems and deficiencies of the priorart, a need for an improved power metal stack in power devices exists.

PURPOSES AND SUMMARY OF THE INVENTION

The present invention provides a power metal stack, and a method formaking the same, having low resistance and which is thermally stablewith aluminum wire bond at high temperatures. A thick power metalinterconnect of Copper or Gold is defined, followed by a polyimidecoating and photolithographically making openings in the polyimide. Wirebond pads of Aluminum with TiW barrier are defined at the openings usingmetal sputtering, photolithography and metal wet etch.

It is therefore a purpose of the present invention to provide a powermetal stack, in semiconductor circuits comprised of power devices andintegrated with logic and memory circuits, which is thermally stablewith large diameter aluminum wire bonding.

Another purpose of the present invention is to provide a power metalstack that is thermally stable with aluminum wire bond at least up toabout 1000 hours at about 225 C.

It is yet another purpose of the present invention to provide a powermetal stack that is thermally stable with aluminum interconnects andaluminum bond wire up to about 24 hours at about 300 C to endure the hotspot thermal excursions accumulated during the application service timeperiod.

It is still another purpose of the present invention to provide a powermetal stack capable of protecting the power devices underneath the bondpad from mechanical forces during large diameter aluminum wire wedgebonding.

It is a further purpose of the present invention to provide a powermetal stack with a sheet resistivity less than about 2 m-ohm/square.

Therefore, in one aspect this invention comprises a substrate (100)having thick metal interconnects of high conductivity power metal (115)with metal caps (117/118), comprising:

(a) at least one integrated circuit fabricated on said substrate (100),said at least one integrated circuit having at least one metallizationlayer (107);

(b) an insulating layer (112) overlaying said at least one metallizationlayer (107), and wherein at least a portion of said at least onemetallization layer (107) is exposed;

(c) at least one high conductivity power metal interconnection (115)making electrical contact with said at least one metallization layer(107);

(d) at least one flowable dielectric layer (116) overlaying said highconductivity power metal interconnection (115) and having at least oneopening (135) to expose a portion of the surface of said highconductivity power metal interconnection (115); and

(e) a metal cap (117/118) disposed over said at least one opening (135)and making electrical contact with said high conductivity power metalinterconnection (115).

In another aspect this invention comprises a substrate (100) havinginterconnections of high conductivity power metal (115) with metal caps(125/127), comprising:

(a) an integrated circuit of semiconductor devices fabricated on saidsubstrate (100), said circuit having at least one metallization layer(107);

(b) an insulating layer (112) overlaying said metallization layer (107)and said substrate (100), having holes (154) and lines (154) exposing atleast a portion of said metallization layer (107);

(c) a high conductivity interconnect power metal interconnection (115)disposed over said holes (154) and lines (154) and making electricalcontact with said metallization layer (107);

(d) a flowable dielectric layer (116) overlaying said high conductivityinterconnect power metal interconnection (115) and said substrate (100),and having an opening (125/127) at selected region (125/127) to expose aportion of said high conductivity interconnect power metalinterconnection surface (115); and

(e) a Nickel-Phosphorus/Gold cap (125/127) within said opening (135) atsaid selected region (135).

In yet another aspect this invention comprises a substrate (100) havinginterconnections of high conductivity power metal (115), comprising:

(a) an integrated circuit of semiconductor devices fabricated on saidsubstrate (100), said circuit having at least one metallization layer(107);

(b) an insulating layer (112) overlaying said metallization layer (107)and said substrate (100), having holes (154) and lines (154) exposing aportion of said metallization layer (107);

(c) a high conductivity power metal interconnect (115) disposed oversaid holes (154) and lines (154) and making electrical contact with saidmetallization layer (107); and

(d) at least one protective metallic coating (120/121) encasing at leasta portion of said high conductivity power metal interconnect (115).

In still yet another aspect this invention comprises a substrate (100)having interconnections of high conductivity power metal (115),comprising:

(a) an integrated circuit of semiconductor devices fabricated on saidsubstrate (100), said circuit having at least one metallization layer(107);

(b) an insulating layer (112) overlaying said metallization layer (107)and said substrate (100), and having holes (154) and lines (154)exposing a portion of said metallization layer (107); and

(c) a high conductivity interconnect metal (115) disposed over saidholes (154) and lines (154) and making electrical contact with saidmetallization layer (107).

In still yet another aspect this invention comprises a substrate (100)having interconnections of high conductivity power metal (115),comprising:

(a) an integrated circuit of semiconductor devices fabricated on saidsubstrate (100), said circuit having at least one metallization layer(107);

(b) an insulating layer (112) overlaying said metallization layer (107)and said substrate (100), and having holes (154) and lines (154)exposing at least a portion of said metallization layer (107); and

(c) wherein at least a portion of said insulating layer (112) above saidmetallization layer (107) has a positive slope (136).

BRIEF DESCRIPTION OF THE DRAWINGS

The features of the invention and the elements characteristic of theinvention are set forth with particularity in the appended claims. Thedrawings are for illustration purposes only and are not drawn to scale.Furthermore, like numbers represent like features in the drawings. Theinvention itself, however, both as to organization and method ofoperation, may best be understood by reference to the detaileddescription which follows taken in conjunction with the accompanyingdrawings in which:

FIG. 1 shows a simplified schematic cross-section of a portion of anintegrated circuit (IC) chip with a diffused drain power transistor.

FIG. 2 shows the relation between reduction of R-on of Power Transistorand the reduced interconnect resistance as represented by Power Metalthickness.

FIG. 3A illustrates various components of an IC contributing to R-on.

FIG. 3B shows equivalent circuits of power transistors laid out in areaarray form.

FIG. 3C is an enlarged view of the equivalent circuits of FIG. 3B.

FIG. 4 shows a cross-section of a prior art IC with power transistor.

FIG. 5A shows an enlargement of the bond pad area in FIG. 4,illustrating that the negative slope in passivation at metal edge willcause a discontinuity in a barrier metal deposited on top of thepassivation.

FIG. 5B shows penetration of the power metal through discontinuity inbarrier metal and reacting with interconnect metal of IC, which causesreliability failures.

FIG. 6 shows a simplified schematic cross-section of an IC with powertransistor processed up to a stage ready for the overlay of passivation;this illustrates the starting substrate for the present invention.

FIG. 7A is an enlarged view of negative slope in passivation at metaledge obtained in the prior art.

FIG. 7B shows formation of voids with capillary entrance in passivationover closely spaced interconnect lines as obtained in the prior art.

FIG. 7C shows positive slope at the metal edge in passivation depositedusing the process of present invention.

FIG. 7D shows absence of voids and capillary entrance in passivationover closely spaced interconnect lines at the metal edge in passivationdeposited with the process of present invention.

FIG. 8 shows a cross-sectional view of the IC substrate afterpassivation etch.

FIG. 9A shows vertical walls of etched via present in the prior artprocess.

FIG. 9B shows sloped via walls in vias etched as per process of thisinvention.

FIG. 10 shows a cross-section of an IC with power transistors and powermetal defined.

FIG. 11 shows a cross sectional view of an IC substrate after the powermetal interconnect is coated with flowable dielectric planarizedaccording to the teaching of the present invention and openings arephotolithographically made to expose selected parts of the power metal.

FIG. 12 shows a cross-sectional view of the structure of one embodimentof the present invention.

FIG. 13 shows a cross-section of an IC substrate with power metal havingpad metal caps larger than the width of the power metal interconnect.

FIG. 14 shows a cross-section of another embodiment of the presentinvention showing an IC substrate having power metal interconnect havingmetal pad caps selectively deposited at selected sites.

FIG. 15 shows a cross-section of yet another embodiment of the presentinvention showing an IC substrate with power metal interconnect coatedon all sides with electroless nickel and a thin coating of gold.

DETAILED DESCRIPTION

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by those of ordinary skillin the art to which this invention belongs.

Reference will be made now to FIGS. 4 to 7 of the drawings in which likenumerals refer to like features of the invention. Referring to FIG. 4,there is shown a cross-section of a present day n-type LaterallyDiffused drain Metal Oxide Silicon (n-LDMOS) power transistor structurein silicon substrate 100. The source 102, the drain 101 and the gate 103form the basic electrodes of a MOS device. It should be understood thatwhereas cross-section of only a power transistor is shown here, anIntegrated Circuit (IC) also contains standard transistors for severalother functions, such as, digital logic, analog functions, to name afew. One of the main feature distinguishing the power transistor fromthe standard transistor is the extended drain 110.

A first level interconnect metal 104, 104-S, 104-D is defined tointerconnect the power transistor electrodes 101, 102 and 103 in arequired manner for a power transistor circuit, such as a linear arrayof power transistors as shown in FIG. 3A, especially components of an ICthat contribute to R-on. An area array as shown in FIG. 3B, which showsthe equivalent circuits of power transistors laid out in area arrayform, while FIG. 3C, is an enlarged view of the equivalent circuits ofFIG. 3B. An inter-metal dielectric (IMD) film or layer 105 is thendeposited and via-studs 106 are formed. It should be understood that itis not necessary to use via-stud technology and one may choose to formvia holes in the IMD film or layer 105. The second level ofinterconnection 107 is then defined. The process steps of definingvia-studs and metal interconnect levels may be repeated if more levelsof interconnections are desired. After the final level ofinterconnection, layer 107 is formed, a silicon nitride passivationlayer or film 108, is deposited and bond pad metal 111 are opened. Theprocess described here forms the present day structure of powertransistor integrated circuits whose cross-section is illustrated withreference to FIG. 4. For such technologies, Aluminum-alloy metallurgiesare invariably used for interconnect. Furthermore, a Plasma EnhancedChemical Vapor Deposition (PECVD) technique with Silane/Ammoniachemistry is typically used to deposit the silicon nitride passivationfilm 108. As shown in FIG. 4, and more clearly shown in FIG. 7A, acharacteristic of the nitride passivation film 108, of prior art isformation of negatively sloped or vertical sidewall 129 in thepassivation layer 108 at edges of interconnect metal 107. Furthermore,in order to maximize the bond pad metal area 111, an anisotropic etch isused to reduce the passivation overlap width on pad metal 111. Theanisotropic etch of the prior art causes near vertical via walls 109, asshown in FIG. 9A.

The process described above forms the cross-section of FIG. 4 that isthe power transistor integrated circuit structure of present day art. Tothose skilled in the art, it should be evident that the above structurecould be modified by interchanging metallurgies, passivations,associated etches, the process sequence and methods for defining theinterconnect lines or via connects, and adding more interconnect layers.By way of example, copper or aluminum metallurgies could be used forinterconnect lines; either etched via holes or via-studs could be usedfor inter metal connections; and, the inter-metal dielectric (IMD) couldbe planarized or non-planarized.

Those skilled in the art will recognize that the materials, tools andprocesses used to make the prior art substrate 100, as described aboveare specifically designed to achieve fine dimensions which are requiredin Integrated Circuit fabrication. For example, the interconnectionmetal thickness is less than about 1.00 um to define the typicallyrequired interconnects line width of less than about 1.0 um.Furthermore, the methods and tools of the prior art substrate 100, arenot amenable to interconnections thicker than about 3 um.

For thicker interconnect metal, an electroplating process is generallyused. Among the low resistivity metals, only copper or gold is amenableto electroplating. Both of these metals have great affinity to reactwith Aluminum interconnect. Accordingly, a continuous barrier, which ismetallurgically stable with Aluminum and with Copper or Gold, isrequired. Titanium, Titanium Nitride, Titanium Tungsten, Tungsten,Tantalum, Tantalum Nitride or any combination thereof, is commonly usedas a barrier layer. These barrier materials are invariably deposited onwafers using Physical Vapor Deposition (PVD) techniques, such assputtering or evaporation.

A characteristic of PVD technique is that the deposition takes place ina line of sight. Referring now to FIGS. 5A and 5B, when a barrier layer120, is deposited, such as, by PVD technique on a passivation layer 108,with negative sloped step walls 129, or near vertical via walls 109, ofpresent day prior art in FIG. 4, discontinuity 119, or considerablythinned down area 119, are formed, as more clearly shown in FIG. 5A.This discontinuity 119, in the barrier layer 120, are the source ofreliability failure caused by open circuit. The open circuit is causedby penetration of low resistivity metal 153, with time and temperature,through these discontinuities 119, in the barrier layer 120, andreacting with the final interconnection layer 107, such as, aluminummetal 107, thereby forming high resistance inter-metallic compound 114,as more clearly shown in FIG. 5B. FIG. 5A basically shows an enlargementof the bond pad area from FIG. 4, illustrating that the negative slope129, in the passivation layer 108, near the metal edge will cause adiscontinuity 119, in a barrier metal layer 120 that is deposited on topof the passivation layer 108. FIG. 5B, basically shows the penetrationof the power metal through the discontinuity 119, in the barrier metallayer 120, and reacting with the interconnect metal 107, of the IC, andforming inter-metallic compound 114, which have been known to causereliability failures.

According to the preferred method of present invention, the conventionalmethod of making power transistor circuits integrated with CMOScircuits, as described above and schematically presented in FIG. 4, isinterrupted after the definition of the last or final interconnectionmetal layer 107. The cross-section of the power IC at this point inprocessing is shown in FIG. 6, and which becomes the starting substrateor die or chip or wafer structure 23, for the present invention.

In standard prior art practice of CMOS IC processing, a silicon nitridepassivation layer 108, is next deposited on the substrate 100, by PECVDtechnique using silane, ammonia and nitrogen chemistry. In standardprior art practice for CMOS IC processing the passivation step structureat metal edge or via wall slope 109 does not play a crucial role;generally the passivation deposition process is optimized for higherdeposition rate which results in a step structure at the metal edgeshown in FIG. 7A. This negative slope 129, in passivation structure atthe metal edge will cause discontinuities 119, or thinning 119, in thebarrier layer, which is to be deposited in the next process step of thepresent embodiment, and thus this prior art process cannot be usedbecause of the creation of the negative slopes 129. Furthermore, thisnegative slopes 129, obtained in the process of the prior art,especially, in closely spaced interconnect lines, the passivation withthe negative slope surface topography forms cavities with capillaryentrance or connections 137, as more clearly shown in FIG. 7B. Suchcavities with capillary entrance or connections 137, trap electrolytesduring further processing steps which then causes corrosion of thebarrier layer of power metal to be deposited later in the process ofthis invention, and thus this process of the prior art cannot be usedwith the process of the present invention.

A passivation having a step with positive slope at metal edge isrequired for the integrity of metal structure that is to be formed nextin the process of the present invention. It has been discovered that apositive slope in the silicon nitride passivation layer 112, at themetal edge can be obtained with a higher nitrogen flow rate and slowerdeposition rate. FIG. 7C shows a structure having a positive slope 136,in the nitride passivation layer 112 at the metal edge, which wasobtained by the optimized process parameters using the process of thepresent invention. The structure of such a passivation layer 112, onclosely spaced interconnection lines underneath is void of any cavitiesor capillary entrance or capillary structure as more clearly shown inFIG. 7D.

FIG. 8 shows a cross-sectional view of an IC substrate 33, after thepassivation etch. Basically, via pattern 154, are definedphotolithographically on top of the passivation layer 112, and thepassivation layer 112, is Reactively Ion Etched (RIE) to expose thedesired portion of the final level of interconnection metal layer 107,such as, an aluminum metal layer 107. After etching of the passivationlayer 112, the resist is removed, and the wafer or substrate 33, iscleaned, such as, with a solvent. FIG. 8 also shows the cross-sectionalview of the power transistor IC 33, after the deposition of thepassivation layer 112 on the final level of interconnection metal layer107, and the exposed areas are the via pattern 154.

The via mask for the process of FIG. 8 is designed to expose the finalinterconnection metal layer 107, where the thick low resistivity powermetal is desired; generally, it is the source and drain interconnects,bus bars and the bond pad areas. It is preferred that the via mask isdesigned such that the passivation opening edge is at least 3 umrecessed into the metal width from the metal line edge.

In the standard prior art CMOS IC processing an anisotropic etch isnormally used to open passivation vias in an attempt to maximize thetotal bond pad area. Such anisotropic etch results in a near verticalvia wall 109, as shown in FIG. 9A. The vertical wall 109, structure thatis formed using the prior art methods should be totally avoided whenmake the structure of the present invention.

It has been discovered that a combination of an isotropic and ananisotropic etch can be used to obtain a positive sloped inner via walls134, as more clearly shown in FIG. 9B. The isotropic etching was carriedout using Reactive Ion Etching (RIE) and using a chemistry ofHelium+Nitrogen Trifluoride, and the substrates were held at atemperature of about 100 C. For an anisotropic RIE, a chemistry ofCF4+CHF3+Ar was used with substrates held at room temperature. Thisanisotropic etch was continued to remove TiN Anti Reflection Coating(ARC) if used on top of the aluminum interconnect.

The wafer or substrate 33, was next processed to define the power metalusing the industry standard method of electroplating through resist. Inthis method, wafer or substrate 33, was loaded into a Physical VaporDeposition tool, such as, for example, a multi-chamber sputterdeposition tool. Wafer or substrate 33, was then RF sputter cleanedusing pure Argon to etch an equivalent of about 150 A of SiO2. A seedlayer, comprised of a barrier metal 114 and a low resistivity metal 113was deposited, as shown in FIG. 10. The barrier metal 114 is generallyTungsten with about 10 atomic percent Titanium (TiW) and having athickness of between about 2 kA to about 4 kA. The barrier metal 114could be selected from a group comprising Titanium, Titanium-Tungsten,Chromium, Tantalum, Tantalum nitride or any combination thereof. Thethickness of the low resistivity metal 113 is between about 0.5 kA toabout 5 kA and it could be either Copper, or Gold, depending uponwhether the desired power metal 115, which would be subsequently formed,is Copper 115, or Gold 115, respectively. It is preferred that the powermetal 115, is a high conductivity power metal 115 or a low resistancepower metal 115.

FIG. 10 shows a cross-section of a power transistor IC chip 43, withpower metal 115. Basically, the wafer or substrate 33, after thedeposition of seed layers 114 and 113, is coated with about 15 um toabout 30 um thick photoresist depending upon the desired thickness ofthe power metal 115. A negative pattern is photolithographically definedusing a mask, which opens the resist from about 2 um to about 4 um widerthan the via pattern openings 154 in the passivation layer 112. A lowresistivity metal 115, such as, for example, copper 115, or gold 115, isthen electroplated using the industry standard electrolytes with thesupplier recommended brightners and additives. The thickness of theelectroplated metal 115, is preferably between about 10 um and about 35um depending upon the required sheet resistivity; typically, copper isabout 10 um and gold is about 13 um thick to provide a sheet resistivityof less than about 2 m-ohm per square. Subsequent to electroplating,resist is removed and the seed layer 114 and 113, are chemically etchedusing the thick deposited metal 115 as a mask.

Referring now to FIG. 11, the wafer or substrate 43, is next processedby spin coating a photoimageable polyimide layer 116, having a thicknessof between about 12 um to about 25 um depending upon the thickness ofelectroplated power metal 115. The primary objective is to achieve apolyimide layer 116 with a thickness adequate to cover the top or uppersurface of the thick power metal layer 115. It should be noted that anyflowable dielectric, such as organo-silicate glass (also known as SOG),may be used followed by photolithography and dry or wet etching of thedielectric. It should be noted that it is not necessary for polyimidelayer 116 to be planarized; however, a planarized passivation offers theadvantage of providing a bond pad which is larger than the power metalarea. A planarized polyimide layer 116 can be obtained by spray coatingor by using a diluted polyimide and spin coating it in several thinlayers; each spin-coated layer 116 is followed by a soft bake to removethe solvent. For the final two coats, an undiluted polyimide 116 ispreferably used. After the first of the last two coats, the wafer orsubstrate 43, is subjected to an etching process, such as, for example,an oxygen etch, to remove the polyimide material 116 on top of the metalfeatures; this polyimide material 116 is generally less than about 1micron thick.

A pad via opening mask is exposed and the polyimide 116, is developed toopen the vias 135 in the polyimide layer 116 aligned to power metal 115.The polyimide 116 is then hard baked at about 300 C for about 1 hour.The planarization obtained by this method is usually less than about 3um for a 14 um total polyimide film thickness.

FIG. 11 shows a cross sectional view of an IC substrate 53, after thepower metal 115, interconnect has been coated and processed with aflowable dielectric 116, which is planarized according to the teachingof the present invention and via or openings 135, arephotolithographically made to expose selected parts of the power metal115. As shown in FIG. 11, the via 135, are etched in a planarizedpolyimide layer 116. However, for some applications it may not benecessary to planarize the polyimide layer 116, but the via 135, couldbe photolithographically exposed and opened.

FIG. 12 shows a cross-sectional view of the structure 63, of oneembodiment of the present invention. Basically, FIG. 12 shows thecross-sectional view of the power transistor IC chip 63, with powermetal 115, and wire bondable metal 118 or wire bond pads 118, of apreferred embodiment of the present invention where the bond padmaterials are thermally stable with the power metal 115 and the thickaluminum wire 128, as more clearly shown in FIG. 13. After the process,as illustrated with reference to FIG. 11, metal pad for wire bonding aredefined on pad vias. In the preferred embodiment of the invention, thebond pad metal is composed of a barrier metal 117, and a wire bondablemetal 118. The barrier metal 117, is preferably selected from a groupcomprising Titanium, Chromium, Tantalum, Tantalum Nitride,Titanium-Tungsten, to name a few. The bond pad metal 118, is preferablyselected from a group comprising Aluminum, Aluminum-Copper,Aluminum-Silicon, Nickel, Nickel with between about 7 percent to about11 percent Phosphorus, Nickel-Vanadium, Gold or any combination thereof,or in any stacking sequence. For Aluminum wire bond, Aluminum or itsalloys, and Ni—P are preferred bond pad metals. It is preferred that theNickel surface is protected from oxidation by a thin layer of Gold. Itis also preferred that the Gold thickness be less than about 1000 Athick.

The barrier metal layer 117, and the wire bondable metals 118, aresequentially deposited, such as using sputter deposition, on the waferor substrate 53. The barrier metal layer 117, thickness is preferablyless than about 3 kA, and the wire bondable metal layer 118, ispreferably less than about 3 um thick. A pad mask is thereafterphotolithographically defined and the pad metal layers, 117 and 118, arewet etched to define the metal pads.

FIG. 13 shows a cross-section of an IC substrate 73, with power metal115, having pad metal caps 118, which are larger than the width of thepower metal interconnect 115. FIG. 13 further shows the power metalstack of the present invention after a wire 128, has been secured to thepad 118. A planarized polyimide layer 116, is shown in FIG. 13, which isfor the purpose of illustration, so that a larger pad size can then bedefined. However, a non-planarized polyimide layer 116, could also beused with this invention. A larger bond pad 118, is preferred for avariety of reasons, such as, for example, (i) if the power metal pads115 are too small for the wire bond; (ii) if the diameter of the wire128 is too large to be accommodated on bond pads; (iii) in order toprovide a cushioning effect during wire bonding to protect the inorganicdielectrics used underneath; or (iv) to protect devices sensitive tomechanical forces, such as Micro Electro Mechanical Systems (MEMS) ifused.

FIG. 14 shows a cross-section of another embodiment of the presentinvention showing an IC substrate 83, having power metal interconnecthaving metal pad caps 125, selectively deposited at selected sites. Inthis embodiment of the present invention, the process of the preferredembodiment is followed until making openings in the flowable dielectriclayer as shown in FIG. 11; however, only copper 115, can be used as thepower metal 115, in this embodiment to create the IC substrate 83. Aplanarized polyimide 116, could be used but it offers no advantages forthis embodiment. Referring to FIG. 14, the bond pads 125, are defined,such as, for example by electroless plating of Ni—P on exposed surfaceof copper 115. This could be followed by immersion gold layer 127, ifdesired. It should be appreciated that the metal pads 125, that areformed to create the IC substrate 83, have the same dimension as the viaor opening 135 as illustrated in FIG. 11.

FIG. 15 shows a cross-section of yet another embodiment of the presentinvention showing an IC substrate 93, with power metal interconnect 115,coated on all sides with electroless nickel 120, and a thin coating ofgold 121. The power transistor IC 93, is processed as in the preferredembodiment, until the process of defining the power metal 115, shown inFIG. 10. Only copper 115, can be used as the power metal 115, in thisembodiment. A layer of electroless nickel 120, such as, NiP 120,followed by immersion gold 121, is deposited in the thickness range ofbetween about 2 um to about 6 um. Electroless Nickel-Immersion Gold(commonly known as ENIG) plating service is available from severalvendors who use their proprietary methods. Generally these processes areaccomplished by first cleaning the surface of the copper 115, activatingthe surface of the copper 115, in a palladium ion solution,electrolessly plating nickel 120, from a phosphate bath to desiredthickness of Nickel 120, followed by immersion gold plating to form goldlayer 121. FIG. 15 further shows the cross-section of the powertransistor IC 93, with copper power metal 115, coated withelectroless-Nickel 120, and immersion gold 121 layer. The plated Nickel120, typically contains between about 7 percent to about 11 percentPhosphorous; the NiP reduces the Nickel diffusivity in Copper 115. Incopper power metal interconnect 115, with a coating of electrolessNickel-Phosphorus 120, diffusion of Nickel into Copper 115, at about 200C for about 1000 hours is negligibly small to cause any resistivityincrease in Copper 115. Further, the NiP 120, provides a much morethermally stable bond with wire 128, such as, an Aluminum wire 128.Furthermore, the high hardness value of NiP 120, provides anon-deformable base for thick aluminum wire bonding. The immersion gold121, is a self-limiting process; the thickness of the plated gold 121,is between about 200 A to about 1000 A.

The plating process for the layer of gold could be selected from a groupcomprising immersion gold plating process or electroless gold platingprocess.

Any of the aforementioned embodiments and modifications thereof willresult in the formation of power metal 115, for various applications.While the invention has been disclosed with reference to embodiment ofpreferred methods of providing Aluminum or Nickel-Phosphide pads forbonding of aluminum wire 128, it would be apparent to those skilled inthe art that various changes to the process, material or sequence ofabove serialized process steps can be made without departing from thescope of the invention and the appended claims. For example, one maychoose to terminate the process after the definition of power metal 115,especially if gold 115, is chosen as power metal 115, as shown in FIG.10 where layer 115 is gold; or, one may choose to deposit electrolessnickel first followed by power metal definition. Whereas theaforementioned preferred method and its embodiments are illustrated forDMOS power transistors, they are specifically designed to include finegeometry CMOS and Bipolar technologies; for example, the one or morelayers of aluminum interconnects could be used for fine geometry CMOS orBipolar circuitries because the thick power metal 115, is added only onthe coarse geometry interconnects of power transistors.

Those skilled in the art will recognize that the invention can bepracticed with modification within the spirit and scope of the appendedclaims; for example, the substrate could be Si—Ge or any II-V compoundlike GaAs.

While the present invention has been particularly described inconjunction with a specific preferred embodiment, it is evident thatmany alternatives, modifications and variations will be apparent tothose skilled in the art in light of the foregoing description. It istherefore contemplated that the appended claims will embrace any suchalternatives, modifications and variations as falling within the truescope and spirit of the present invention.

1. A substrate (100) having thick metal interconnects of highconductivity power metal (115) with metal caps (117/118), comprising:(a) at least one integrated circuit fabricated on said substrate (100),said at least one integrated circuit having at least one metallizationlayer (107); (b) an insulating layer (112) overlaying said at least onemetallization layer (107), and wherein at least a portion of said atleast one metallization layer (107) is exposed; (c) at least one highconductivity power metal interconnection (115) making electrical contactwith said at least one metallization layer (107); (d) at least oneflowable dielectric layer (116) overlaying said high conductivity powermetal interconnection (115) and having at least one opening (135) toexpose a portion of the surface of said high conductivity power metalinterconnection (115); and (e) a metal cap (117/118) disposed over saidat least one opening (135) and making electrical contact with said highconductivity power metal interconnection (115).
 2. The substrate ofclaim 1, wherein said integrated circuit includes at least one powertransistor.
 3. The substrate of claim 1, wherein said insulating film isselected from a group consisting of Silicon Nitride, SiliconOxy-Nitride, Silicon Oxide, Organo-Silicate Glass (SOG), Polyimides, andcombinations thereof.
 4. The substrate of claim 1, wherein at least aportion of the wall of said opening in said insulating layer is tapered.5. The substrate of claim 1, wherein the wall of said opening in saidinsulating layer overlaps at least a portion of said metallizationlayer, and wherein said overlap is at least about 2 um.
 6. The substrateof claim 1, wherein said high conductivity power metal interconnectcomprises of at least one barrier layer and at least one highconductivity metal layer.
 7. The substrate of claim 6, wherein said atleast one barrier layer is selected from a group consisting of Ti, TiN,TiW, Cr, Ta, TaN, and combinations thereof.
 8. The substrate of claim 6,wherein said at least one high conductivity metal layer is selected froma group consisting of Copper and Gold.
 9. The substrate of claim 6,wherein the thickness of said at least one barrier layer is at leastabout 2 kA.
 10. The substrate of claim 6, wherein the thickness of saidat least one high conductivity metal layer is between about 5 um toabout 50 um, and preferably between about 5 um to about 30 um.
 11. Thesubstrate of claim 1, wherein said flowable dielectric layer is selectedfrom a group consisting of Polyimide, BCB, Ortho Silicate Glass, andcombinations thereof.
 12. The substrate of claim 1, wherein the surfaceof said flowable dielectric layer and said high conductivity power metalinterconnect is selected from a group consisting of planar surface andnon-planar surface.
 13. The substrate of claim 1, wherein said metal capcomprises of at least one barrier layer and at least one wire bondablemetal layer.
 14. The substrate of claim 13, wherein said at least onebarrier layer is selected from a group consisting of Ti, TiN, TiW, Cr,Ta, TaN, and combinations thereof.
 15. The substrate of claim 13,wherein said at least one wire bondable metal layer is selected from agroup consisting of Nickel, Nickel-Phosphorus, Aluminum,Aluminum-Silicon, Aluminum-Copper, Aluminum-Copper-Silicon, Gold, andcombinations thereof.
 16. The substrate of claim 13, wherein thethickness of said at least one barrier layer is at least about 2 kA. 17.The substrate of claim 13, wherein the thickness of said at least onewire bondable metal layer is at least about 1 um.
 18. The substrate ofclaim 1, wherein said wire bondable metal cap layer is larger than saidopening in said dielectric layer.
 19. A substrate (100) havinginterconnections of high conductivity power metal (115) with metal caps(125/127), comprising: (a) an integrated circuit of semiconductordevices fabricated on said substrate (100), said circuit having at leastone metallization layer (107); (b) an insulating layer (112) overlayingsaid metallization layer (107) and said substrate (100), having holes(154) and lines (154) exposing at least a portion of said metallizationlayer (107); (c) a high conductivity interconnect power metalinterconnection (115) disposed over said holes (154) and lines (154) andmaking electrical contact with said metallization layer (107); (d) aflowable dielectric layer (116) overlaying said high conductivityinterconnect power metal interconnection (115) and said substrate (100),and having an opening (125/127) at selected region (125/127) to expose aportion of said high conductivity interconnect power metalinterconnection surface (115); and (e) a Nickel-Phosphorus/Gold cap(125/127) within said opening (135) at said selected region (135).
 20. Asubstrate (100) having interconnections of high conductivity power metal(115), comprising: (a) an integrated circuit of semiconductor devicesfabricated on said substrate (100), said circuit having at least onemetallization layer (107); (b) an insulating layer (112) overlaying saidmetallization layer (107) and said substrate (100), having holes (154)and lines (154) exposing a portion of said metallization layer (107);(c) a high conductivity power metal interconnect (115) disposed oversaid holes (154) and lines (154) and making electrical contact with saidmetallization layer (107); and (d) at least one protective metalliccoating (120/121) encasing at least a portion of said high conductivitypower metal interconnect (115).
 21. The substrate of claim 20, whereinsaid semiconductor devices include at least one power transistor. 22.The substrate of claim 20, wherein said insulating layer is selectedfrom a group consisting of Silicon Nitride, Silicon Oxy-Nitride, SiliconOxide, Organo-Silicate Glass (SOG), Polyimides, and combinationsthereof.
 23. The substrate of claim 20, wherein at least a portion ofthe walls for said holes and lines in said insulating layer are tapered.24. The substrate of claim 20, wherein said high conductivity powerinterconnect metal is selected from a group consisting of a Titaniummetal layer, and a Titanium-Nitride barrier metal layer with a coppermetal layer.
 25. The substrate of claim 20, wherein said highconductivity power metal interconnect comprises of at least one barrierlayer and at least one high conductivity metal layer.
 26. The substrateof claim 20, wherein said at least one barrier layer is selected from agroup consisting of Ti, TiN, TiW, Cr, Ta, TaN, and combinations thereof.27. The substrate of claim 20, wherein said at least one highconductivity metal layer is Copper.
 28. The substrate of claim 20,wherein the thickness of said copper layer is between about 5 um toabout 50 um, and preferably between about 5 um to about 35 um.
 29. Thesubstrate of claim 20, wherein said metallic coating is selected from agroup consisting of Nickel-Phosphorus and Gold.
 30. The substrate ofclaim 20, wherein said Nickel-Phosphorus layer contains between about 7percent to about 11 percent Phosphorus.
 31. The substrate of claim 20,wherein the thickness of said Nickel-Phosphorus coating is at leastabout 1 um.
 32. The substrate of claim 20, wherein the thickness of saidGold layer is less than about 1.2 kA, and preferably less than about 1kA.
 33. A substrate (100) having interconnections of high conductivitypower metal (115), comprising: (a) an integrated circuit ofsemiconductor devices fabricated on said substrate (100), said circuithaving at least one metallization layer (107); (b) an insulating layer(112) overlaying said metallization layer (107) and said substrate(100), and having holes (154) and lines (154) exposing a portion of saidmetallization layer (107); and (c) a high conductivity interconnectmetal (115) disposed over said holes (154) and lines (154) and makingelectrical contact with said metallization layer (107).
 34. Thesubstrate of claim 33, wherein said semiconductor devices include powertransistors.
 35. The substrate of claim 33, wherein said insulating filmis selected from a group consisting of Silicon Nitride, SiliconOxy-Nitride, Silicon Oxide, Organo-Silicate Glass (SOG), Polyimides, andcombinations thereof.
 36. The substrate of claim 33, wherein at least aportion of the walls for said holes and lines in said insulating layerare tapered.
 37. The substrate of claim 33, wherein said highconductivity power metal comprises a TiW barrier layer and a gold metallayer.
 38. The substrate of claim 37, wherein the thickness of said TiWbarrier layer is at least about 2 kA.
 39. The substrate of claim 37,wherein the thickness of said gold metal layer is between about 5 um toabout 50 um, and preferably between about 5 um to about 35 um.
 40. Asubstrate (100) having interconnections of high conductivity power metal(115), comprising: (a) an integrated circuit of semiconductor devicesfabricated on said substrate (100), said circuit having at least onemetallization layer (107); (b) an insulating layer (112) overlaying saidmetallization layer (107) and said substrate (100), and having holes(154) and lines (154) exposing at least a portion of said metallizationlayer (107); and (c) wherein at least a portion of said insulating layer(112) above said metallization layer (107) has a positive slope (136).